Effect of O2/ar ratio on optical properties of indium tin oxide thin films deposited by dc magnetron sputtering
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Indium tin oxide thin films were deposited by DC magnetron sputtering from In2O3 and SnO2 as a ceramic target with 10 wt% of SnO2. The films were sputtered under pressure of 2?10-3 torr, power density of 1.23 W/cm2 and substrate temperature of 200 oC. The main goal is to improve the optical properties of ITO thin films by using a mixture of oxygen and argon gasses with O2/Ar ratios varies from 0.0 to 0.5. The best average values of optical properties in the visible light region were found at the O2/Ar ratio of 0.2. The highest transmittance was 90.68% and the lowest reflectance was 9.42%. The result showed reflectance decreased by 5.52% compared to the films sputtered with only Ar.
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