Show simple item record

dc.contributor.authorSootkaneung, Warinen_US
dc.contributor.authorHowimanporn, Suppachaien_US
dc.contributor.authorChookaew, Sasithornen_US
dc.date.accessioned2018-07-03T09:25:14Z
dc.date.available2018-07-03T09:25:14Z
dc.date.issued2018-07-03
dc.identifier.issn1906-0432
dc.identifier.urihttp://repository.rmutp.ac.th/handle/123456789/2424
dc.descriptionวารสารวิชาการและวิจัย มทร.พระนคร, 11 (1) : 65-77en_US
dc.description.abstractFor modern processors, two reliability issues, namely increased leakage power and soft error rate, continue to intensify as device technologies scale down to nanometers. While many researchers have proposed methods to efficiently control leakage power by tuning body bias, few recent works have considered the quantitative negative impact of this technique on circuit soft error vulnerability. In this paper, we introduce a novel body bias based approach for reliability improvement that correlates leakage reduction and soft error immunity degradation. The experimental results show that the proposed technique provides satisfactory leakage reduction with confined soft error degradation in 32 nm high-k/metal gate benchmark circuits.en_US
dc.description.sponsorshipRajamangala University of Technology Phra Nakhonen_US
dc.language.isothen_US
dc.subjectElectric circuitsen_US
dc.subjectStray currentsen_US
dc.subjectBody biasen_US
dc.subjectSoft erroren_US
dc.titleSoft error-aware leakage reduction through body biasen_US
dc.typeJournal Articlesen_US
dc.contributor.emailauthorwarin.s@rmutp.ac.then_US
dc.contributor.emailauthorarit@rmutp.ac.then_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record